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Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor
  • ISSN号：1674-1056
  • 期刊名称：Chinese Physics B
  • 时间：2013.6
  • 页码：067203-1-067203-6
  • 相关项目：AlGaN/GaN异质结场效应晶体管中与AlGaN势垒层应变分布相关的载流子散射机制研究
作者： Luan Chong-Biao|Wang Yu-Tang|Chen Hong|Wang Zhan-Guo|
同期刊论文项目
AlGaN/GaN异质结场效应晶体管中与AlGaN势垒层应变分布相关的载流子散射机制研究
期刊论文 42 会议论文 6
同项目期刊论文
Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect trans
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostru
Directly extracting both threshold voltage and series resistance from the conductance-voltage curve
Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostruc
Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility
The influence of the channel electric field distribution on the polarization Coulomb field scatterin
Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure
A study of the impactof gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect
Influence of the channel electric field distribution on the polarization Coulomb field scattering in
Enhanced effect of strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure f
Comparison for the carrier mobility between the III-V nitrides and AlGaAs/GaAs heterostructure field
Influence of polarization coulomb field scattering on the subthreshold swing in depletion-mode AlGaN
Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN
Improvement of switching characteristics bysubstrate bias in AlGaN/AlN/GaN heterostructure field eff
Influence of sapphire substrate thickness on thecharacteristics of AlGaN/AlN/GaN heterostructure fie
Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterost
The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN h
A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterost
Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN
Effects of GaN cap layer thickness on an AlN/GaN heterostructure
Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier
Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transist
A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from
Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN
Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/
Analysis of interface trap states in InAlN/AlN/GaN heterostructures
Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
Comparison for the carrier mobility between the III-V nitrides and AIGaAs/GaAs heterostructure field-effect transistors
Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors
Comparison of electrical characteristic between AIN/GaN and AIGaN/GaN heterostructure Schottky diodes
Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AIN/GaN and AIGaN/GaN heterostructure Schottky diodes
期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406