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Analysis of interface trap states in InAlN/AlN/GaN heterostructures
  • ISSN号：0268-1242
  • 期刊名称：Semiconductor Science and Technology
  • 时间：2014.8.1
  • 页码：-
  • 相关项目：AlGaN/GaN异质结场效应晶体管中与AlGaN势垒层应变分布相关的载流子散射机制研究
作者： Yang, Ming|Wang, Yutang|Feng, Zhihong|Lv, Yuanjie|
同期刊论文项目
AlGaN/GaN异质结场效应晶体管中与AlGaN势垒层应变分布相关的载流子散射机制研究
期刊论文 42 会议论文 6
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