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Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technol
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：2013.11
  • 页码：3669-3675
  • 相关项目：新型围栅硅纳米线MOS器件的涨落性与可靠性研究
作者： Jiang, Xiaobo|Wang, Runsheng|Yu, Tao|Chen, Jiang|Huang, Ru|
同期刊论文项目
新型围栅硅纳米线MOS器件的涨落性与可靠性研究
期刊论文 8 会议论文 20
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