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Study on the Ge1-xSnx/HfO2 interface and its impacts on Ge1-xSnx tunneling transistor
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2014.6.21
  • 页码：-
  • 相关项目：新型围栅硅纳米线MOS器件的涨落性与可靠性研究
作者： Qiu, Yingxin|Wang, Runsheng|Huang, Qianqian|Huang, Ru|
同期刊论文项目
新型围栅硅纳米线MOS器件的涨落性与可靠性研究
期刊论文 8 会议论文 20
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