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Experimental study on the oxide trap coupling effect in metal oxide semiconductor field effect trans
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2014.6.30
  • 页码：-
  • 相关项目：新型围栅硅纳米线MOS器件的涨落性与可靠性研究
作者： Ren, Pengpeng|Wang, Runsheng|Jiang, Xiaobo|Qiu, Yingxin|Liu, Changze|Huang, Ru|
同期刊论文项目
新型围栅硅纳米线MOS器件的涨落性与可靠性研究
期刊论文 8 会议论文 20
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