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Impacts of short-channel effects on the random threshold voltage variation in nanoscale transistors
  • ISSN号：1674-733X
  • 期刊名称：Science China Information Sciences
  • 时间：2013
  • 页码：1-7
  • 相关项目：新型围栅硅纳米线MOS器件的涨落性与可靠性研究
作者： Wang RunSheng|Yu Tao|Huang Ru|Wang YangYuan|
同期刊论文项目
新型围栅硅纳米线MOS器件的涨落性与可靠性研究
期刊论文 8 会议论文 20
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