用射频磁控溅射ZnO陶瓷靶、直流磁控溅射Cu靶的方法在不同基底温度下制备了Cu纳米夹层结构ZnO透明导电膜。用X射线衍射仪、紫外.可见分光光度计、四探针电阻测量仪和原子力显微镜等测试手段对薄膜样品进行表征。室温制备的Cu夹层ZnO薄膜,随着Cu层厚度的增加,ZnO层结晶性变差,可见光区域光学透过率减小,透射曲线蓝移,电阻率先迅速下降后缓慢下降。基底温度对薄膜表面形貌和粗糙度影响显著,随着基底温度的增加,薄膜在可见光区域光学透过率增加,电阻率随基底温度增加而增加。
Transparent and conductive ZnO films with Cu interlayer were prepared on glass substrates by RF magnetron sputtering of ZnO and DC magnetron sputtering of Cu at different substrate temperature. The properties were characterized with X-ray diffraction, UV-VIS spectrometer, four-point probe and atomic force microscopy. With increase of Cu interlayer thickness, the crystallinity of ZnO layers becomes worse, the optical transmittance decreases in visible wavelength region, the transmittance peak shifts toward short wavelength, the resistivity first rapidly decreases and then slowly decreases for ZnO films with Cu interlayer deposited at room temperature. The substrate temperature has distinct influence on the morphology and roughness. With increase of substrate temperature, the optical transmittance increases in visible wavelength region, and the resistivity also increases.