中文摘要：

采用脉冲激光沉积（PLD）法在Si（111）衬底上制备了Eu3＋,Li＋共掺杂的ZnO薄膜,分别在450,500,550和600℃条件下进行退火,退火气氛为真空。利用X射线衍射（XRD）仪和荧光分光光度计研究了退火温度对薄膜结构和光致发光（PL）的影响。研究结果表明,Eu3＋,Li＋共掺杂的ZnO薄膜具有c轴择优取向,Eu3＋,Li＋没有单独形成结晶的氧化物,均以离子形式掺入ZnO晶格中。PL谱中有较宽的ZnO基质缺陷发光,ZnO基质与稀土Eu3＋之间存在能量传递,但没有有效的能量传递。随着退火温度的增加,薄膜发光先增强后减弱,退火温度为550℃时发光最强。当用395 nm的激发光激发样品时,仅观察到稀土Eu3＋在594 nm附近的特征发光峰,但发光强度随退火温度变化不明显。

英文摘要：

Eu3＋ and Li＋ co-doped ZnO films were prepared by pulsed laser deposition（PLD）,and then annealed at different temperatures in vacuum.The films were characterized by X-ray diffraction（XRD） and photoluminescence（PL） spectra.The XRD patterns revealed that the ZnO：Eu3＋,Li＋ films were highly c-axis oriented and Eu3＋ ions were successfully incorporated into ZnO crystals.The PL spectra of ZnO：Eu3＋,Li＋ films showed that the energy transferred from the host ZnO to Eu3＋ was weak and ineffective.When excited at the wavelength of 325 nm,the emission spectra of all samples showed an UV band peaking at 390 nm and a wide band peaking at 470 nm,but no peaks appeared corresponding with Eu3＋.With annealing temperatures increasing,the PL intensity increased at first and then decreased,and 550 ℃ is the best temperature for the samples annealed in vacuum.When excited at the wavelength of 395 nm,only a characteristic emission of 594 nm belonging to Eu3＋ was observed,and with the annealing temperature increase,the peak intensity kept almost the same.