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Effect of SiO2 buffer layer thickness on the properties of ITO/Cu/ITO multilayer films deposited on
  • ISSN号：0042-207X
  • 期刊名称：Vacuum
  • 时间：0
  • 页码：443-447
  • 相关项目：多层结构Ga2O3深紫外透明导电膜研究
作者： Xingwei Ding|Jinliang Yan|Ting Li|Liying Zhang|
同期刊论文项目
多层结构Ga2O3深紫外透明导电膜研究
期刊论文 46 获奖 2
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纳米Ag夹层ZnO薄膜的光电性能
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Si掺杂beta-Ga2O3的第一性原理计算与实验研究
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First-principles study on electronic structure and optical properties of N-doped P-type beta-Ga2O3
Effects of N-doping concentration on the electronic structure and optical properties of N-doped beta
Effect of substrate temperature on the properties of deep ultraviolet transparent conductive ITO/Ga2
Structural and optical properties of Zn-doped beta-Ga2O3 films
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Electronic structures and optical properties of Nb-doped SrTiO3 from first principles
Electronic structure and optical properties of F-doped β-Ga_2O_3 from first principles calculations
Electronic structure and optical property of p-type Zn-doped SnO2 with Sn vacancy
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Effect of Ga2O3 buffer layer thickness on the properties of Cu/ITO thin films deposited on flexible substrates
The effect of the multi-period on the properties of deep-ultraviolet transparent conductive Ga2O3/ITO alternating multilayer films
Effect of substrate temperature on the properties of deep ultraviolet transparent conductive ITO/Ga2O3 films
Structural and optical properties of Zn3N2 films prepared by magnetron sputtering in NH3-Ar mixture gases
Structural and optical properties of Zn-doped β-Ga203 films
两步法生长ZnO纳米棒的结构及其发光特性
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