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Si掺杂beta-Ga2O3的第一性原理计算与实验研究
  • ISSN号：1000-3290
  • 期刊名称：物理学报
  • 时间：0
  • 页码：-
  • 相关项目：多层结构Ga2O3深紫外透明导电膜研究
作者： 张易军|闫金良|赵刚|谢万峰|
同期刊论文项目
多层结构Ga2O3深紫外透明导电膜研究
期刊论文 46 获奖 2
同项目期刊论文
First-principles study on electronic structure and optical properties of Sn-doped beta-Ga2O3
Electrical and optical properties of deep ultraviolet transparent conductive Ga2O3/ITO films by magn
室温沉积Cu夹层ZnO薄膜的光电性能
Cu掺杂Ga2O3薄膜的光学性能
Electronic structure and optical properties of Sn2xGa2(1-x)O3 compounds
Optical properties of N-doped beta-Ga2O3 films deposited by RF magnetron sputtering
纳米Cu夹层ZnO透明导电膜
纳米Ag夹层ZnO薄膜的光电性能
Optical and structural properties of Cu-doped beta-Ga2O3 films
Effect of SiO2 buffer layer thickness on the properties of ITO/Cu/ITO multilayer films deposited on
Structural and optical properties of N-doped beta-Ga2O3 films deposited by RF magnetron sputtering
A comparison of electronic structure and optical properties between N-doped beta-Ga2O3 and N-Zn co-d
Electronic structures and optical properties of Zn-doped beta-Ga2O3 with different doping sites
First-principles study on electronic structure and optical properties of N-doped P-type beta-Ga2O3
Effects of N-doping concentration on the electronic structure and optical properties of N-doped beta
Effect of substrate temperature on the properties of deep ultraviolet transparent conductive ITO/Ga2
Structural and optical properties of Zn-doped beta-Ga2O3 films
Structural and optical properties of Zn3N2 films prepared by magnetron sputtering in NH3-Ar mixture
退火温度对PLD法制备ZnO：Eu~（3＋）,Li~＋薄膜结构和发光性质的影响
MSM结构ZnO／Cu薄膜的接触特性
用第一性原理研究Ti掺杂β-Ga2O3的电子结构和光学性能
Si掺杂β-Ga2O3的第一性原理计算与实验研究
Electronic structures and optical properties of Nb-doped SrTiO3 from first principles
Electronic structure and optical properties of F-doped β-Ga_2O_3 from first principles calculations
Electronic structure and optical property of p-type Zn-doped SnO2 with Sn vacancy
Transparent and conductive PEDOT：PSS/Ag NW/PEDOT：PSS hybrid films pre- pared by spin-coating at room temperature
First-principles study on electronic structure and conductivity of Sn-doped Ga1.375In0.625O3
The effects of N-doping and oxygen vacancy on the electronic structure and conductivity of PbTiO3
Effects of N concentration on electronic and optical properties of N-doped PbTiO3
First-principles study of n-type tin/fluorine co-doped beta-gallium oxides
Effect of Ga2O3 buffer layer thickness on the properties of Cu/ITO thin films deposited on flexible substrates
The effect of the multi-period on the properties of deep-ultraviolet transparent conductive Ga2O3/ITO alternating multilayer films
Effect of substrate temperature on the properties of deep ultraviolet transparent conductive ITO/Ga2O3 films
Structural and optical properties of Zn3N2 films prepared by magnetron sputtering in NH3-Ar mixture gases
Structural and optical properties of Zn-doped β-Ga203 films
两步法生长ZnO纳米棒的结构及其发光特性
基于PLD法制备ZnO：Eu~（3＋）,Li~＋薄膜的发光性质研究
氧分压对ZnO：EU3＋，Li＋薄膜结构和光学性质的影响
期刊信息
  • 《物理学报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国物理学会 中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京603信箱(中国科学院物理研究所)
  • 邮编：100190
  • 邮箱：apsoffice@iphy.ac.cn
  • 电话：010-82649026
  • 国际标准刊号：ISSN：1000-3290
  • 国内统一刊号：ISSN：11-1958/O4
  • 邮发代号:2-425
  • 获奖情况:
  • 1999年首届国家期刊奖,2000年中科院优秀期刊特等奖,2001年科技期刊最高方阵队双高期刊居中国期刊第12位
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  • 被引量:49876