中文摘要：

The Ga2O3/ZnO multilayer films are deposited on quartz substrates by magnetron sputtering, the thickness values of Ga2O3layers are in a range of 19 nm–2.5 nm and the thickness of ZnO layer is a constant of 1 nm. Formation of spinel ZnGa2O4film is achieved via the annealing of the Ga2O3/ZnO multilayer film. The influences of original Ga2O3sublayer thickness on the optical and structural properties of Ga2O3/ZnO multilayer films and annealed films are studied. With the decrease of the thickness of Ga2O3sublayer, the optical band-gap of Ga2O3/ZnO multilayer film decreases, the intensity of UV emission diminishes and the intensity of violet emission increases. The annealed film displays the enlarged optical band gap and the quenched violet emission. UV fluorescence bands are observed from Ga2O3and ZnGa2O4.

英文摘要：

The Ga203/ZnO multilayer films are deposited on quartz substrates by magnetron sputtering, the thickness values of Ga203 layers are in a range of 19 nm-2.5 nm and the thickness of ZnO layer is a constant of 1 nm. Formation of spinel ZnGa204 film is achieved via the annealing of the Ga203/ZnO multilayer film. The influences of original Ga203 sublayer thickness on the optical and structural properties of Ga203/ZnO multilayer films and annealed films are studied. With the decrease of the thickness of Ga203 sublayer, the optical band-gap of Ga203/ZnO multilayer film decreases, the intensity of UV emission diminishes and the intensity of violet emission increases. The annealed film displays the enlarged optical band gap and the quenched violet emission. UV fluorescence bands are observed from Ga203 and ZnGa204.