中文摘要：

采用脉冲激光沉积（PLD）技术在Si（111）衬底上生长了Eu3＋、Li＋共掺杂的ZnO薄膜。分别对样品进行了X射线衍射（XRD）谱测试和光致发光（PL）谱分析,重点研究了退火处理对样品结构和发射光谱的影响。XRD谱测试表明,样品具有很好的C轴择优取向。PL谱研究表明,当用325nm光激发样品时,样品的发射光谱仅由ZnO基质的紫外发射和蓝光发射组成,并没有发现稀土Eu3＋的特征发光峰;样品的蓝光发射源于电子从Zn填隙形成的浅施主能级到Zn空位形成的浅受主能级跃迁;和真空中退火的样品相比,O2中制备的样品的蓝光发射减弱,紫外发光增强。用395nm的光激发时,退火前样品分别在594nm和613nm处存在两个明显的Eu3＋特征发光峰,退火后的样品仅发现Eu3＋位于594nm的特征发光峰,这表明,退火处理不利于稀土离子的特征发射,但O2中退火的样品ZnO基质红绿波段发射光谱明显增强。

英文摘要：

Eu3＋ and Li＋ co-doped ZnO films were deposited on Si（111） substrates by the pulsed laser deposition（PLD） method,and annealed in vacuum and oxygen,respectively.The photoluminescence（PL） spectra and the X-ray diffraction（XRD） spectra of the films were measured.Through the X-ray diffraction,it can be seen that the ZnO：Eu3＋,Li＋ films are highly c-axis oriented.Compared with the film annealed at vacuum,when excited under the wavelength of 325 nm,the PL spectra exhibit two bands including a UV band and a blue band,and the PL intensity annealed under oxygen is stronger in the UV region,but weaker in blue region.When the sample irradiated without annealing under the wavelength of 395 nm,obvious emission at the wavelengths of about 594 nm and 613 nm from the rare-earth element of Eu3＋ can be observed in the photoluminescence spectra,but only obvious emission at the wavelength of about 594 nm is observed,which shows that annealing is disadvantageous for Eu3＋ emission.