中文摘要：

<正>ITO/Ga2O3 bi-layer films were deposited on quartz glass substrates by magnetron sputtering.The effect of substrate temperature on the structure,surface morphology,optical and electrical properties of ITO/Ga2O3 films was investigated by an X-ray diffractometer,a scanning electron microscope,a double beam spectrophotometer and the Hall system,respectively.The structural characteristics showed a dependence on substrate temperature. The resistivity of the films varied from 6.71×10-3 to 1.91×103Ω·cm as the substrate temperature increased from 100 to 350℃.ITO（22 nm）/Ga2O3（50 nm） films deposited at 300℃exhibited a low sheet resistance of 373.3Ω/□and high deep ultraviolet transmittance of 78.97%at the wavelength of 300 nm.

英文摘要：

ITO/Ga2O3 bi-layer films were deposited on quartz glass substrates by magnetron sputtering. The effect of substrate temperature on the structure, surface morphology, optical and electrical properties of ITO/Ga2O3 films was investigated by an X-ray diffractometer, a scanning electron microscope, a double beam spectrophotometer and the Hall system, respectively. The structural characteristics showed a dependence on substrate temperature. The resistivity of the films varied from 6.71 × 10^-3 to 1.91× 10^-3 Ω·cm as the substrate temperature increased from 100 to 350℃. ITO （22 nm）/Ga2O3 （50 nm） films deposited at 300℃ exhibited a low sheet resistance of 373.3 Ω/□ and high deep ultraviolet transmittance of 78.97% at the wavelength of 300 nm.