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Electronic structures and optical properties of Nb-doped SrTiO3 from first principles
  • ISSN号:1674-4926
  • 期刊名称:《半导体学报:英文版》
  • 时间:0
  • 分类:TN383.1[电子电信—物理电子学] TB383[一般工业技术—材料科学与工程]
  • 作者机构:School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China
  • 相关基金:Project supported by the National Natural Science Foundation of China (No. 10974077) and the Innovation Project of Shandong Graduate Education, China (No. SDYY 13093).
中文摘要:

The n-type Nb-doped SrTiO3 with different doping concentrations were studied by first principles calculations.The effects of Nb concentration on the formation enthalpy,electronic structure and optical property were investigated.Results show that Nb preferentially enters the Ti site in SrTiO3,which is in good agreement with the experimental observation.The Fermi level of Nb-doped SrTiO3 moves into the bottom of the conduction band,and the system becomes an n-type semiconductor.The effect of Nb-doping concentration on the conductivity was discussed from the microscopic point of view.Furthermore,the 1.11 at%Nb-doped SrTiO3 shows strong absorption in the visible light and becomes a very useful material for photo-catalytic activity.The 1.67 at% and 2.5 at%Nb-doped models will be potential transparent conductive materials.

英文摘要:

The n-type Nb-doped SrTiO3 with different doping concentrations were studied by first principles cal- culations. The effects of Nb concentration on the formation enthalpy, electronic structure and optical property were investigated. Results show that Nb preferentially enters the Ti site in SrTiO3, which is in good agreement with the experimental observation. The Fermi level of Nb-doped SrTiO3 moves into the bottom of the conduction band, and the system becomes an n-type semiconductor. The effect of Nb-doping concentration on the conductivity was discussed from the microscopic point of view. Furthermore, the 1.11 at% Nb-doped SrTiO3 shows strong absorp- tion in the visible light and becomes a very useful material for photo-catalytic activity. The 1.67 at% and 2.5 at% Nb-doped models will be potential transparent conductive materials.

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期刊信息
  • 《半导体学报:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编:李树深
  • 地址:北京912信箱
  • 邮编:100083
  • 邮箱:cjs@semi.ac.cn
  • 电话:010-82304277
  • 国际标准刊号:ISSN:1674-4926
  • 国内统一刊号:ISSN:11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
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  • 被引量:7754