位置：成果数据库 > 期刊 > 期刊详情页
Tunnelling currents through oxygen vacancies in ultrathin SiO2 layer
  • ISSN号：0020-7217
  • 期刊名称：International Journal of Electronics
  • 时间：0
  • 页码：985-994
  • 语言：英文
  • 相关项目：氢、氧、氮相关缺陷的精细电子结构对下一代GLSI电路性能的影响
作者： Mao, L.F.|
同期刊论文项目
氢、氧、氮相关缺陷的精细电子结构对下一代GLSI电路性能的影响
期刊论文 30 会议论文 4
同项目期刊论文
二维短沟道MOSFET阈值电压分析模型
Effects of quantum coupling on the performance of metal-oxide-semiconductor field transistors
Finite size effects on the gate leakage current in graphene nanoribbon field-effect transistors
Remote surface roughness effects on inversion electron density in nano-MOSFET
The Effects of Vacancy on Electronic conductance in nanowire devices
Effects of Dielectric Constant Mismatch on Capacitance-voltage Curve
The quantum size effects on the surface potential of nanocrystalline silicon thin film transistors
Effects of the size of silicon grain on the gate-leakage current in nanocrystalline silicon thin-fil
Energy distribution of channel electrons and its impacts on the gate leakage current in graphene fie
Finite-Size Effects on Thermionic Emission in Metal-Graphene-Nanoribbon Contacts
Effects of Channel Electron In-Plane Velocity on the Capacitance-Voltage Curve of MOS Devices
Si能带的非抛物线性对MOSFET电子输运的影响
Study of the effects of the antisite related defects in silicon dioxide of metal-oxide-semiconductor
Investigation of the correlation between temperature and enhancement of electron tunneling current t
Modeling the effects of the channel electron velocity on the channel surface potential of ballistic
Investigating the effects of the interface defects on the gate leakage current in MOSFETs
First-principles simulations of the leakage current in metal-oxide- semiconductor structures caused
The gate leakage current in graphene field-effect transistor
An analytical approach for studying the resonant states in mesoscopic devices using the phase cohere
Modeling of temperature dependence of the leakage current through a hafnium silicate gate dielectric
The conduction band alignment of HfO2 caused by oxygen vacancies and its effects on the gate leakage
First-principles study of the effects of oxygen vacancy on hole tunneling current
Temperature dependence of the tunneling current in metal-oxide- semiconductor devices due to the cou
Tunneling currents through lightly nitride silicon dioxide/oxide stacks
An analytical approach to the tunnelling current of MOSFETs considering the barrier height reduction
The effects of the in-plane momentum on the quantization of nanometer metal-oxide-semiconductor devi
The effects of the injection-channel velocity on the gate leakage current of nanoscale MOSFETs
简论同行评议开放期刊的发展及影响
简论电子期刊对图书馆期刊服务的影响