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An analytical approach to the tunnelling current of MOSFETs considering the barrier height reduction
  • ISSN号：0031-8965
  • 期刊名称：Physica Status Solidi A-Applications and Materials
  • 时间：0
  • 页码：3193-3200
  • 语言：英文
  • 相关项目：氢、氧、氮相关缺陷的精细电子结构对下一代GLSI电路性能的影响
作者： Mao, Ling-Feng|
同期刊论文项目
氢、氧、氮相关缺陷的精细电子结构对下一代GLSI电路性能的影响
期刊论文 30 会议论文 4
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