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The conduction band alignment of HfO2 caused by oxygen vacancies and its effects on the gate leakage
  • ISSN号：1286-0042
  • 期刊名称：European Physical Journal-Applied Physics
  • 时间：0
  • 页码：59-63
  • 语言：英文
  • 相关项目：氢、氧、氮相关缺陷的精细电子结构对下一代GLSI电路性能的影响
作者： Wang, Z. O.|Mao, L. F.|Wang, J. Y.|Zhu, C. Y.|
同期刊论文项目
氢、氧、氮相关缺陷的精细电子结构对下一代GLSI电路性能的影响
期刊论文 30 会议论文 4
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