位置：成果数据库 > 期刊 > 期刊详情页
Tunneling currents through lightly nitride silicon dioxide/oxide stacks
  • ISSN号：1862-6300
  • 期刊名称：Physica Status Solidi (A) Applications and Materia
  • 时间：0
  • 页码：784-790
  • 语言：英文
  • 相关项目：氢、氧、氮相关缺陷的精细电子结构对下一代GLSI电路性能的影响
作者： Wang, Z.O.|Mao, L.F.|
同期刊论文项目
氢、氧、氮相关缺陷的精细电子结构对下一代GLSI电路性能的影响
期刊论文 30 会议论文 4
同项目期刊论文
二维短沟道MOSFET阈值电压分析模型
Effects of quantum coupling on the performance of metal-oxide-semiconductor field transistors
Finite size effects on the gate leakage current in graphene nanoribbon field-effect transistors
Remote surface roughness effects on inversion electron density in nano-MOSFET
The Effects of Vacancy on Electronic conductance in nanowire devices
Effects of Dielectric Constant Mismatch on Capacitance-voltage Curve
The quantum size effects on the surface potential of nanocrystalline silicon thin film transistors
Effects of the size of silicon grain on the gate-leakage current in nanocrystalline silicon thin-fil
Energy distribution of channel electrons and its impacts on the gate leakage current in graphene fie
Finite-Size Effects on Thermionic Emission in Metal-Graphene-Nanoribbon Contacts
Effects of Channel Electron In-Plane Velocity on the Capacitance-Voltage Curve of MOS Devices
Si能带的非抛物线性对MOSFET电子输运的影响
Study of the effects of the antisite related defects in silicon dioxide of metal-oxide-semiconductor
Investigation of the correlation between temperature and enhancement of electron tunneling current t
Modeling the effects of the channel electron velocity on the channel surface potential of ballistic
Investigating the effects of the interface defects on the gate leakage current in MOSFETs
First-principles simulations of the leakage current in metal-oxide- semiconductor structures caused
The gate leakage current in graphene field-effect transistor
An analytical approach for studying the resonant states in mesoscopic devices using the phase cohere
Tunnelling currents through oxygen vacancies in ultrathin SiO2 layer
Modeling of temperature dependence of the leakage current through a hafnium silicate gate dielectric
The conduction band alignment of HfO2 caused by oxygen vacancies and its effects on the gate leakage
First-principles study of the effects of oxygen vacancy on hole tunneling current
Temperature dependence of the tunneling current in metal-oxide- semiconductor devices due to the cou
An analytical approach to the tunnelling current of MOSFETs considering the barrier height reduction
The effects of the in-plane momentum on the quantization of nanometer metal-oxide-semiconductor devi
The effects of the injection-channel velocity on the gate leakage current of nanoscale MOSFETs
简论同行评议开放期刊的发展及影响
简论电子期刊对图书馆期刊服务的影响