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氢、氧、氮相关缺陷的精细电子结构对下一代GLSI电路性能的影响
  • 项目名称：氢、氧、氮相关缺陷的精细电子结构对下一代GLSI电路性能的影响
  • 项目类别：青年科学基金项目
  • 批准号：60606016
  • 申请代码：F040604
  • 项目来源：国家自然科学基金
  • 研究期限：2007-01-01-2009-12-31
  • 项目负责人：毛凌锋
  • 负责人职称：教授
  • 依托单位：苏州大学
  • 批准年度：2006
中文摘要：

随着集成电路集成度的提高和新工艺的开发，缺陷态和界面过渡层的作用日益凸显，成为影响下一代MOS器件常规特性和可靠性的关键因素之一,精确表征缺陷态对新一代MOS器件特性的影响已变得极为迫切。由于量子效应越来越显著，采用新的理论方法研究缺陷特性势在必行。本课题考虑MOS器件中氢、氮和氧构成的多种缺陷态，建立能够反映实际缺陷的合理结构，用基于密度泛函理论的第一原理计算缺陷的精细电子结构，并结合量子输运理论计算缺陷态对纳米I-V特性及可靠性的影响；由相关实验数据分析特定缺陷的实验规律，建立缺陷态和界面过渡层对器件特性及可靠性影响的表征模型。本课题充分发挥微电子学、凝聚态物理、量子化学与计算物理等多学科交叉的优势，研究缺陷态对新一代纳米尺度范围内MOS器件的特性影响，获得精确表征缺陷态和界面过渡层对新一代器件常规特性和可靠性影响的模型，为新一代器件的工艺和建模提供必要的理论和实验依据

中文主题词： 半导体器件;可靠性;MOS器件;缺陷;电子输运
结论摘要：

英文主题词seniconductor device;reliability;MOS device;defect, electron transport

成果综合统计
成果类型
数量
  • 期刊论文
  • 会议论文
  • 专利
  • 获奖
  • 著作
  • 30
  • 4
  • 0
  • 0
  • 0
期刊论文
二维短沟道MOSFET阈值电压分析模型
Effects of quantum coupling on the performance of metal-oxide-semiconductor field transistors
Finite size effects on the gate leakage current in graphene nanoribbon field-effect transistors
Remote surface roughness effects on inversion electron density in nano-MOSFET
The Effects of Vacancy on Electronic conductance in nanowire devices
Effects of Dielectric Constant Mismatch on Capacitance-voltage Curve
The quantum size effects on the surface potential of nanocrystalline silicon thin film transistors
Effects of the size of silicon grain on the gate-leakage current in nanocrystalline silicon thin-fil
Energy distribution of channel electrons and its impacts on the gate leakage current in graphene fie
Finite-Size Effects on Thermionic Emission in Metal-Graphene-Nanoribbon Contacts
Effects of Channel Electron In-Plane Velocity on the Capacitance-Voltage Curve of MOS Devices
Si能带的非抛物线性对MOSFET电子输运的影响
Study of the effects of the antisite related defects in silicon dioxide of metal-oxide-semiconductor
Investigation of the correlation between temperature and enhancement of electron tunneling current t
Modeling the effects of the channel electron velocity on the channel surface potential of ballistic
Investigating the effects of the interface defects on the gate leakage current in MOSFETs
First-principles simulations of the leakage current in metal-oxide- semiconductor structures caused
The gate leakage current in graphene field-effect transistor
An analytical approach for studying the resonant states in mesoscopic devices using the phase cohere
Tunnelling currents through oxygen vacancies in ultrathin SiO2 layer
Modeling of temperature dependence of the leakage current through a hafnium silicate gate dielectric
The conduction band alignment of HfO2 caused by oxygen vacancies and its effects on the gate leakage
First-principles study of the effects of oxygen vacancy on hole tunneling current
Temperature dependence of the tunneling current in metal-oxide- semiconductor devices due to the cou
Tunneling currents through lightly nitride silicon dioxide/oxide stacks
An analytical approach to the tunnelling current of MOSFETs considering the barrier height reduction
The effects of the in-plane momentum on the quantization of nanometer metal-oxide-semiconductor devi
The effects of the injection-channel velocity on the gate leakage current of nanoscale MOSFETs
简论同行评议开放期刊的发展及影响
简论电子期刊对图书馆期刊服务的影响
会议论文
Simulation the effect of the defect on the conductance of nanowire
Theoretical study of fowler-nodheim current oscillations in Graphene field effect transistor
Study the effects of the doped-B atom on silicon nanodot
Modeling the stress-induced leakage current origin from antisite defects in MOSFETs
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