中文摘要：

考虑外加磁场、压力及屏蔽效应,利用变分方法数值计算GaN/AlxGa1-xN无限深量子阱系统中的杂质态结合能。给出结合能随磁场和阱宽的变化关系,同时讨论了有无屏蔽时的区别。结果表明：在磁场和压力作用下,结合能随阱宽的增大而减小;阱宽和压力一定时,结合能随磁场的增大而增大。屏蔽效应使得有效库仑吸引作用减弱而导致杂质态结合能显著下降。屏蔽效应对结合能的影响随压力增大而增强,随磁场强度增大而减弱。

英文摘要：

Considering the hydrostatic pressure and screening effect on the GaN/AlxGa1-xN quantum well with infinite barriers under an external magnetic field.The variational methods are used to numerical calculation the binding energies of the impurity in the system.The relations between the binding energies of donors with magnetic field strength and well width is given.We also discussed the difference between the cases with and without screening.The resultds indicate that the binding energy increases with the well width under a fixed magnetic field strength and pressure.The results also show that the binding energy increases with the magnetic field strength for a given well width and pressure.Because of the screening reduce coulomb interaction effectively,the binding energy of impurity states decreases significantly.Screening effect increases with the pressure and decreases with the magnetic field strength.