位置：成果数据库 > 期刊 > 期刊详情页
Strain Field Mapping of Dislocations in a Ge/Si Heterostructure
  • ISSN号：1932-6203
  • 期刊名称：PLos One
  • 时间：2013
  • 页码：e62672-
  • 相关项目：硅锗异质结构界面纳观应变场及其对光电性能的调控
作者： Liu, Q.L.|Zhao, C.W.|Su, S.J.|Li, J.J.|Xing, Y.M.|Cheng, B.W.|
同期刊论文项目
硅锗异质结构界面纳观应变场及其对光电性能的调控
期刊论文 22 会议论文 1
同项目期刊论文
In situ observation of structural rearrangement of a Cu nanotwin particle
Fabrication and morphology of KOH etching single crystalline silicon solar cells
Full-Field Strain Mapping at a Ge/Si Heterostructure Interface
外场下压力及屏蔽对无限深量子阱中施主结合能的影响
Ca掺杂纤锌矿ZnO电子结构和光学性质的第一性原理研究
First-principle study on the effect of high Li-2N co-doping on the conductivity of ZnO
Quantitative analysis of nanoscale deformation fields of a crack-tip in single-crystal silicon
Curie temperature of 3d transition-metal-doped GaAs
First-principles study of the electronic structure and absorption spectrum of heavily Nd-doped anata
First-principles study on the electronic structures and absorption spectra of Sm-N codoped anatase T
Quantitative strain analysis of misfit dislocations in a Ge/Si heterostructure interface by geometri
压力及屏蔽对无限深量子阱中施主结合能的影响
Nanoscale deformation analysis of twin boundary dislocations in nanocrystalline aluminum
Experimental examination of strain field within GP zone in an Al–Zn–Mg–Cu alloy
Nanoscale deformation analysis near crack-tip under residual stress in Si by high-resolution transmi
Towards Perfectly Ordered Novel ZnO/Si Nano-Heterojunction Arrays
Frist principles study of effect of high Al doping concentration of p-type ZnO on electric conductiv
In-situ SEM investigation of sub-microscale deformation fields around a crack-tip in silicon
Al高掺杂浓度对ZnO导电性能影响的第一性原理研究
Sm-N共掺杂对锐钛矿相TiO2的电子结构和吸收光谱影响的第一性原理研究
Nd高掺杂锐钛矿相TiO2电子结构和吸收光谱的第一原理研究