中文摘要：

对GaAs/AlxGa1-xAs和GaN/AlxGa1-xN无限深量子阱系统,考虑压力及屏蔽效应,利用变分方法数值计算这两种系统中的杂质态结合能。给出了结合能随阱宽和压力的变化关系,同时讨论了有无屏蔽时的区别。结果表明,结合能随压力增大而增大,随阱宽增大而减小;屏蔽效应随着压力的增加而增加,并且显著降低了杂质态的结合能。

英文摘要：

Under the effects of hydrostatic pressure and screening on the infinite GaAs/AlxGa1-xAs and GaN/AlxGa1-xN quantum wells,the binding energies of the impurity are calculated by the variational method in the two systems.The impurity binding energies as functions of the well width and pressure are given.The result indicates that the binding energy increases with pressure,but decreases with well width.We also discussed the binding energies of impurity with and without the screening effects.It is found that the screening effect became stronger as pressure increases,and then decreases the binding energy of impurity significantly.