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Full-Field Strain Mapping at a Ge/Si Heterostructure Interface
  • ISSN号：1996-1944
  • 期刊名称：Materials
  • 时间：2013.6.6
  • 页码：2130-2142
  • 相关项目：硅锗异质结构界面纳观应变场及其对光电性能的调控
作者： Li, J.J.|Zhao, C.W.|Xing, Y.M.|Su, S.J.|Cheng, B.W.|
同期刊论文项目
硅锗异质结构界面纳观应变场及其对光电性能的调控
期刊论文 22 会议论文 1
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