中文摘要：

SiC nanowires and SiC/SiO2 core-shell structural nanowires were synthesized via a simple thermal evaporation of CoxSiy melts at the temperature of 1500?C. The morphologies and yields of those SiC nanowires can be tuned by altering the composition of CoxSiy. Nanowires obtained by thermal evaporation of Co Si are composed of SiC/SiO2 core-shell nanostructures with lengths up to several hundreds of micrometers, diameters of 4050 nm, and the thickness of amorphous SiO2 wrapping shell about 20 nm. SiC nanowires prepared by thermal evaporation of Co Si2 and Co2 Si melt are found to be hexagonal-prism-shaped nanorods, and the diameter of those nanorods is about 150 nm and the length is about 10 microns. All the SiC nanowires obtained possess [111] preferred growth direction with a high density stacking faults and twin defects. Taking into consideration the binary alloy diagram of Co Si and the participation of oxygen, we propose the vapor-solid growth mechanism of SiC nanowires and discuss the effect of the supersaturation of Si O on the morphology and yields of SiC nanowires.

英文摘要：

SiC nanowires and SiC/SiO2 core-shell structural nanowires were synthesized via a simple thermal evaporation of CoxSiy melts at the temperature of 1500 degrees C. The morphologies and yields of those SiC nanowires can be tuned by altering the composition of CoxSiy. Nanowires obtained by thermal evaporation of CoSi are composed of SiC/SiO2 core-shell nanostructures with lengths up to several hundreds of micrometers, diameters of 40-50 nm, and the thickness of amorphous SiO2 wrapping shell about 20 nm. SiC nanowires prepared by thermal evaporation of CoSi2 and Co2Si melt are found to be hexagonal-prism-shaped nanorods, and the diameter of those nanorods is about 150 nm and the length is about 10 microns. All the SiC nanowires obtained possess [111] preferred growth direction with a high density stacking faults and twin defects. Taking into consideration the binary alloy diagram of CoSi and the participation of oxygen, we propose the vapor-solid growth mechanism of SiC nanowires and discuss the effect of the supersaturation of SiO on the morphology and yields of SiC nanowires.