中文摘要：

利用高纯SiC烧结靶上粘贴金属Cr片的复合靶用双离子束溅射沉积方法，在Si和KBr单晶衬底上制备了掺杂SiC薄膜。用傅里叶变换红外光谱分析法（FTIR）和喇曼光谱仪对制得的薄膜样品进行了表征，用荧光分光光度计对样品的光致发光（PL）特性进行了研究。通过FTIR分析得到对应于Si—C键的峰位没有发生明显改变而峰强随着Cr掺杂量的增加而降低，喇曼光谱分析发现Cr掺杂导致Si和C团簇的形成，说明Cr的掺杂阻碍了Si—C键的结合。将不同Cr掺杂浓度的SiC薄膜经1000℃退火处理，发现位于413、451和469nm的三个发光峰的位置基本不变，但强度有明显改变。

英文摘要：

Cr-doped SiC films were fabricated on Si and KBr substrates by using dual ion beam sputtering deposition with Cr-metal pasted on a high-purity SiC sintered target. Fourier transform infrared spec-troscopy （FTIR） and Raman spectroscopy were used to analyze these samples, and the photoluminescence （PL） characteristics was studied by fluorescence spectrophotometer. FTIR analysis shows that the position corresponded to Si -- C bond does not change significantly while the peak value decreases with the increase amount of Cr introduced into SiC. Raman analysis indicates that Cr leads to the formation of Si and C clusters, which hinder the Si-- C bond combination. After annealing at 1 000℃, it is found that the three positions of 413, 451, 469 nm LED peaks are essentially the same while their intensities change clearly.