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中文摘要：
通过射频磁控溅射的方法，分别在NaCl和Si基片上制备厚度约为10nm的ZnO薄膜，通过SEM、TEM等测试手段分析了薄膜的表面状况，结果显示，在两种基片上沉积的薄膜都呈现分形生长的形貌．通过对两种基片上生长的薄膜进行比较，分别计算了这两种薄膜的分形维数．在Al2O3上制备了厚度约为300nm的ZnO薄膜，通过在不同温度下对样品进行退火处理，并利用XRD、PL测试手段研究了退火处理对薄膜结构和光致发光性质的影响．结果表明，随着退火温度升高，薄膜的晶体结构逐渐变好，发光峰位也随着退火温度发生偏移．
英文摘要：
ZnO films were prepared by the Radio Frequency magnetron sputtering technique on single crystal NaCl substrates and Si （ 111 ） substrate with a ceramic ZnO target. The thin films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM） and transmission electron microscopy （TEM）. The results showed that the films were both fractal like at the early stage of the film growth. The effect of the substrate on the shape of the ZnO film was discussed using diffusion-limited aggregation cluster model. The fractal dimension of the thin film was calculated by box-counting method. The effect of the annealing process on the structure and PL properties of the ZnO film was also discussed. The result showed that as increase the annealing temperature, the crystallization of the film became better. The PL peak shifts when increase the annealing temperature.
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