欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
采用射频磁控溅射制备了不同Cu掺杂浓度的ZnO薄膜．以X射线衍射、扫描电镜等对薄膜的结构和形貌进行了表征，XRD和SEM测试结果显示Cu掺杂量为5．0at．％时，Zno9，Cu0.05O薄膜呈纳米柱状结构．同时也对薄膜的光致发光（PL）进行了研究．结果表明，406nm的发光峰源于带边自由激子电子的复合，440nm的发光峰则和薄膜中的锌间隙Zni缺陷有关．
英文摘要：
Cu-doped ZnO films were prepared by radio frequency （RF） magnetron sputtering. The structure and morphology of films were studied using X-ray diffraction （XRD） and scanning electron microscope（SEM） while optical properties by photo-luminescence （PL） spectra. XRD and SEM results indicate that ZnO films doped with moderate Cu dopant 5.0 at. % can obtain wurtzite structure with nanorods aligned perpendicularly to the substrate surface. 406 nm and 440 nm peaks due to free exciton recombination and structural defects such as Zn interstitials of films.
同期刊论文项目
同项目期刊论文
The structure and optical properties of SiC film on Si(111) substrate with a ZnO buffer layer by Rf_
Study on Suppression Mechanism of Electron Emission from Mo Grid Coated with Carbon Film By Dual Ion
Structure and photoluminescence properties of SiC films synthesized by the RF-magnetron sputtering t
Electron emission suppression characteristics of molybdenum grids coated with Pt films by ion-beam-a
The structure and optical properties of SiC film on Si (111) substrate with a ZnO buffer layer by RF
期刊信息
位置：