中文摘要：

采用文献（魏洪川，喻文健，杨柳，等．基于K参数思想的快速三维互连电感电阻提取算法．电子学报，2005，33（8）：1365—1369）中提出的算法选取窗口，证明基于此方法提取的部分磁阻矩阵K正定，进而证明基于该矩阵的模拟稳定．

英文摘要：

The window selection method proposed in （Wei Hongchuan, Yu Wenjian, Yang Liu, et al. Fast inductance and resistance extraction of 3-D VLSI interconnects based on the method of K element. Acta Electronica Sinica, 2005, 33（8）： 1365-1369） was used in the paper. We proved based on it, the partial reluctance matrix extracted is positive definite. So the simulation based on it is stable.