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Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory
  • 期刊名称：Electron Device Letters, IEEE
  • 时间：0
  • 页码：1326-1328
  • 语言：英文
  • 相关项目：纳米工艺下可制造性和成品率驱动的集成电路设计方法学研究
作者： Bin Yu|Haowei Zhang|Lifeng Liu|Xiaoyan Liu|Bin Gao|Jinfeng Kang|Ruqi Han|Bing Sun|
同期刊论文项目
纳米工艺下可制造性和成品率驱动的集成电路设计方法学研究
期刊论文 14 会议论文 37 专利 10
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