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Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs
  • ISSN号：1536-125X
  • 期刊名称：IEEE Transactions on Nanotechnology
  • 时间：0
  • 页码：244-249
  • 语言：英文
  • 相关项目：纳米工艺下可制造性和成品率驱动的集成电路设计方法学研究
作者： Xiaoyan Liu|Ruqi Han|Shimeng Yu|Yuning Zhao|Yunxiang Yang|Gang Du|Lang Zeng|
同期刊论文项目
纳米工艺下可制造性和成品率驱动的集成电路设计方法学研究
期刊论文 14 会议论文 37 专利 10
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