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Impact of line-edge roughness on double-gate Schottky-barrier field-effect transistors
期刊名称:IEEE Trans. Electron Devices
时间:0
页码:1211-1219
语言:英文
相关项目:纳米工艺下可制造性和成品率驱动的集成电路设计方法学研究
作者:
Zeng Lang|Du Gang|Kang Jinfeng|Zhao Yuning|Han Ruqi|Liu Xiaoyan|Yu Shimeng|
同期刊论文项目
纳米工艺下可制造性和成品率驱动的集成电路设计方法学研究
期刊论文 14
会议论文 37
专利 10
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