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Impact of line-edge roughness on double-gate Schottky-barrier field-effect transistors
  • 期刊名称：IEEE Trans. Electron Devices
  • 时间：0
  • 页码：1211-1219
  • 语言：英文
  • 相关项目：纳米工艺下可制造性和成品率驱动的集成电路设计方法学研究
作者： Zeng Lang|Du Gang|Kang Jinfeng|Zhao Yuning|Han Ruqi|Liu Xiaoyan|Yu Shimeng|
同期刊论文项目
纳米工艺下可制造性和成品率驱动的集成电路设计方法学研究
期刊论文 14 会议论文 37 专利 10
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