位置：成果数据库 > 期刊 > 期刊详情页
Physical-Based Threshold Voltage and Mobility Models Including Shallow Trench Isolation Stress Effec
  • ISSN号：1536-125X
  • 期刊名称：IEEE Transactions on Nanotechnology
  • 时间：0
  • 页码：875-880
  • 语言：英文
  • 相关项目：纳米工艺下可制造性和成品率驱动的集成电路设计方法学研究
作者： Gang Du|Xiao Yan Liu|Wei Wu|Ruqi Han|Jin Feng Kang|Lei Sun|
同期刊论文项目
纳米工艺下可制造性和成品率驱动的集成电路设计方法学研究
期刊论文 14 会议论文 37 专利 10
同项目期刊论文
Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory
A spread spectrum clock generator with a wide frequency and attenuation tuning range based on a thir
Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-on-Thin-Box (SO
Analysis and Optimization of Thermal-Driven Global Interconnects in Nanometer Design
A glance of technology efforts for design-for-manufacturing in nano-scale CMOS processes
纳米CMOS工艺下集成电路可制造性设计技术
Impact of line-edge roughness on double-gate Schottky-barrier field-effect transistors
Triple-gate fin field effect transistors with fin-thickness optimization to reduce the impact of fin
The impact of line edge roughness on the stability of a FinFET SRAM.
Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs
An area-efficient 55 nm 10-bit 1-MS/s SAR ADC for battery voltage measurement