欢迎您!
东篱公司
退出
申报数据库
申报指南
立项数据库
成果数据库
期刊论文
会议论文
著 作
专 利
项目获奖数据库
位置:
成果数据库
>
期刊
> 期刊详情页
纳米CMOS工艺下集成电路可制造性设计技术
期刊名称:中国科学(E辑:信息科学)
时间:0
页码:968-978
语言:中文
相关项目:纳米工艺下可制造性和成品率驱动的集成电路设计方法学研究
作者:
程玉华|
同期刊论文项目
纳米工艺下可制造性和成品率驱动的集成电路设计方法学研究
期刊论文 14
会议论文 37
专利 10
同项目期刊论文
Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory
A spread spectrum clock generator with a wide frequency and attenuation tuning range based on a thir
Physical-Based Threshold Voltage and Mobility Models Including Shallow Trench Isolation Stress Effec
Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-on-Thin-Box (SO
Analysis and Optimization of Thermal-Driven Global Interconnects in Nanometer Design
A glance of technology efforts for design-for-manufacturing in nano-scale CMOS processes
Impact of line-edge roughness on double-gate Schottky-barrier field-effect transistors
Triple-gate fin field effect transistors with fin-thickness optimization to reduce the impact of fin
The impact of line edge roughness on the stability of a FinFET SRAM.
Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs
An area-efficient 55 nm 10-bit 1-MS/s SAR ADC for battery voltage measurement