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High performance AIGaN/GaN HEMTs with 2.4 μm source-drain spacing
  • ISSN号：1674-4926
  • 期刊名称：《半导体学报：英文版》
  • 时间：0
  • 分类：TN386[电子电信—物理电子学] TN304.23[电子电信—物理电子学]
  • 作者机构：[1]Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China, [2]Graduated University of the Chinese Academy of Sciences, Beijing 100049, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （No. 60890191）.
作者： 王东方, 魏珂, 袁婷婷, 刘新宇
关键词： HEMT器件, GAN, 间距, 性能, 微米, 最高振荡频率, 过程实施, 氮化镓, A1GaN/GaN HEMT, high frequency, source-drain spacing
中文摘要：

Corresponding author. Email： wdf0155@sina.com

同期刊论文项目
GaN基毫米波功率器件与材料基础与关键技术研究
期刊论文 134 会议论文 8
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期刊信息
  • 《半导体学报：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编：李树深
  • 地址：北京912信箱
  • 邮编：100083
  • 邮箱：cjs@semi.ac.cn
  • 电话：010-82304277
  • 国际标准刊号：ISSN：1674-4926
  • 国内统一刊号：ISSN：11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
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  • 被引量:7754