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Neutron irradiation effects on AlGaN/GaN high electron mobility transistors
  • ISSN号：1674-1056
  • 期刊名称：Chinese Physics B
  • 时间：0
  • 页码：360-364
  • 相关项目：GaN基毫米波功率器件与材料基础与关键技术研究
作者： 吕玲|吕玲|张进成|张进成|薛军帅|薛军帅|马晓华|马晓华|张伟|张伟|毕志伟|毕志伟|张月|张月|郝跃|郝跃|L Ling,Zhang Jin-Cheng,Xue Jun-Shuai,Ma Xiao-Hua,|L Ling,Zhang Jin-Cheng,Xue Jun-Shuai,Ma Xiao-Hua,|
同期刊论文项目
GaN基毫米波功率器件与材料基础与关键技术研究
期刊论文 134 会议论文 8
同项目期刊论文
The experiential fit of the capacitance-voltage characteristics of the AlGaN/AlN/GaN high electron m
最大振荡频率为200GHz的蓝宝石衬底AlGaN/GaN HEMT(英文)
Gate-Recessed AlGaN/GaN MOSHEMTs with the Maximum Oscillation Frequency Exceeding 120 GHz on Sapphir
Improvements in (11(2)over-bar2) semipolar GaN crystal quality by graded superlattices
Gate-structure optimization for high frequency power AlGaN/GaN HEMTs
Growth of InGaN and double heterojunction structure with InGaN back barrier
Effect of varying layouts on the gate temperature for multi-finger AlGaN/GaN HEMTs
High performance AlGaN/GaN HEMTs with 2.4 μm source-drain spacing
增强型AlGaN/GaN高电子迁移率晶体管高温退火研究
Role of Ti/Al relative thickness in the formation mechanism of Ti/Al/Ni/Au Ohmic contacts to AlGaN/G
A Ka-band 22 dBm GaN amplifier MMIC
The physical process analysis of the capacitance-voltage characteristics of AlGaN/AlN/GaN high elect
A revised approach to Schottky parameter extraction for GaN HEMT
A Ku-band 3.4 W/mm power AlGaN/GaN HEMT on a sapphire substrate
Investigation of passivation effects in AlGaN/GaN metal-insulator-semiconductor high electron-mobili
AlGaN/AlN/GaN高电子迁移率器件的电容电压特性的经验拟合
非故意掺杂与半绝缘GaN缓冲层上的AlGaN/GaN异质结构的高温电子输运特性
晶格匹配InAlN/GaN和InAlN/AlN/GaN材料二维电子气输运特性研究
高电子迁移率晶格匹配InAlN/GaN材料研究
Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage
Effect of defects on strain state in nonpolar a-plane GaN
AlGaN/GaN HEMTs with 0.2μm V-gate recesses for X-band application
Transport characteristics of AlGaN/GaN/AlGaN double heterostructures with high electron mobility
Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer
Improvement of breakdown characteristics of an AlGaN/GaN HEMT with a U-type gate foot for millimeter
Proton irradiation effects on HVPE GaN
Reliability of SiN-based MIM capacitors in GaN MMIC
斜切蓝宝石衬底MOCVD生长GaN薄膜的透射电镜研究
Influence of double AlN buffer layers on the qualities of GaN films prepared by metal-organic chemic
Characteristics of AIGaN/GaN/AIGaN double heterojunction HEMTs with an improved breakdown voltage
AlGaN/GaN HEMTs with 0.2μm V-gate recesses for X-band application
A Ku band internally matched high power GaN HEMT amplifier with over 30% of PAE
Effect of varying layouts on the gate temperature for multi-finger AIGaN/GaN HEMTs
A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier
High performance AIGaN/GaN HEMTs with 2.4 μm source-drain spacing
An 8 GHz high power AlGaN/GaN HEMT VCO
Stress, structural and electrical properties of Si-doped GaN film grown by MOCVD
Ka波段16W脉冲功率放大器的研制
氮化物MOCVD反应室流场的仿真与分析
Degradation mechanism of two-dimensional electron gas density in high Al-content AlGaN/GaN heterostructures
AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition
最大振荡频率为200GHz的蓝宝石衬底AlGaN/GaN HEMT
Improvement of breakdown characteristics of an A1GaN/GaN HEMT with a U-type gate foot for millimeter-wave power application
期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
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  • 被引量:406