位置：成果数据库 > 期刊 > 期刊详情页
Effect of varying layouts on the gate temperature for multi-finger AlGaN/GaN HEMTs
  • ISSN号：1674-4926
  • 期刊名称：Journal of Semiconductors
  • 时间：0
  • 页码：-
  • 相关项目：GaN基毫米波功率器件与材料基础与关键技术研究
作者： Wang, Jianhui1|Wang, Jianhui1|Wang, Xinhua1|Wang, Xinhua1|Pang, Lei1|Pang, Lei1|Chen, Xiaojuan1|Chen, Xiaojuan1|Jin, Zhi1|Jin, Zhi1|Liu, Xinyu1|Liu, Xinyu1|
同期刊论文项目
GaN基毫米波功率器件与材料基础与关键技术研究
期刊论文 134 会议论文 8
同项目期刊论文
The experiential fit of the capacitance-voltage characteristics of the AlGaN/AlN/GaN high electron m
最大振荡频率为200GHz的蓝宝石衬底AlGaN/GaN HEMT(英文)
Gate-Recessed AlGaN/GaN MOSHEMTs with the Maximum Oscillation Frequency Exceeding 120 GHz on Sapphir
Improvements in (11(2)over-bar2) semipolar GaN crystal quality by graded superlattices
Gate-structure optimization for high frequency power AlGaN/GaN HEMTs
Growth of InGaN and double heterojunction structure with InGaN back barrier
High performance AlGaN/GaN HEMTs with 2.4 μm source-drain spacing
增强型AlGaN/GaN高电子迁移率晶体管高温退火研究
Role of Ti/Al relative thickness in the formation mechanism of Ti/Al/Ni/Au Ohmic contacts to AlGaN/G
A Ka-band 22 dBm GaN amplifier MMIC
The physical process analysis of the capacitance-voltage characteristics of AlGaN/AlN/GaN high elect
A revised approach to Schottky parameter extraction for GaN HEMT
A Ku-band 3.4 W/mm power AlGaN/GaN HEMT on a sapphire substrate
Investigation of passivation effects in AlGaN/GaN metal-insulator-semiconductor high electron-mobili
AlGaN/AlN/GaN高电子迁移率器件的电容电压特性的经验拟合
非故意掺杂与半绝缘GaN缓冲层上的AlGaN/GaN异质结构的高温电子输运特性
晶格匹配InAlN/GaN和InAlN/AlN/GaN材料二维电子气输运特性研究
高电子迁移率晶格匹配InAlN/GaN材料研究
Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage
Effect of defects on strain state in nonpolar a-plane GaN
AlGaN/GaN HEMTs with 0.2μm V-gate recesses for X-band application
Transport characteristics of AlGaN/GaN/AlGaN double heterostructures with high electron mobility
Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer
Improvement of breakdown characteristics of an AlGaN/GaN HEMT with a U-type gate foot for millimeter
Proton irradiation effects on HVPE GaN
Reliability of SiN-based MIM capacitors in GaN MMIC
Neutron irradiation effects on AlGaN/GaN high electron mobility transistors
斜切蓝宝石衬底MOCVD生长GaN薄膜的透射电镜研究
Influence of double AlN buffer layers on the qualities of GaN films prepared by metal-organic chemic
Characteristics of AIGaN/GaN/AIGaN double heterojunction HEMTs with an improved breakdown voltage
AlGaN/GaN HEMTs with 0.2μm V-gate recesses for X-band application
A Ku band internally matched high power GaN HEMT amplifier with over 30% of PAE
Effect of varying layouts on the gate temperature for multi-finger AIGaN/GaN HEMTs
A Ku-band high power density AlGaN/GaN HEMT monolithic power amplifier
High performance AIGaN/GaN HEMTs with 2.4 μm source-drain spacing
An 8 GHz high power AlGaN/GaN HEMT VCO
Stress, structural and electrical properties of Si-doped GaN film grown by MOCVD
Ka波段16W脉冲功率放大器的研制
氮化物MOCVD反应室流场的仿真与分析
Degradation mechanism of two-dimensional electron gas density in high Al-content AlGaN/GaN heterostructures
AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition
最大振荡频率为200GHz的蓝宝石衬底AlGaN/GaN HEMT
Improvement of breakdown characteristics of an A1GaN/GaN HEMT with a U-type gate foot for millimeter-wave power application
期刊信息
  • 《半导体学报：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编：李树深
  • 地址：北京912信箱
  • 邮编：100083
  • 邮箱：cjs@semi.ac.cn
  • 电话：010-82304277
  • 国际标准刊号：ISSN：1674-4926
  • 国内统一刊号：ISSN：11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国化学文摘（网络版）,荷兰文摘与引文数据库,美国工程索引,美国剑桥科学文摘,英国科学文摘数据库,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,英国英国皇家化学学会文摘,中国北大核心期刊（2000版）
  • 被引量:7754