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Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage
  • ISSN号：0253-4177
  • 期刊名称：半导体学报
  • 时间：0
  • 页码：-
  • 相关项目：GaN基毫米波功率器件与材料基础与关键技术研究
作者： Ma Juncai|Ma Juncai|Zhang Jincheng|Zhang Jincheng|Xue Junshuai|Xue Junshuai|Lin Zhiyu|Lin Zhiyu|Liu Ziyang|Liu Ziyang|Xue Xiaoyong|Xue Xiaoyong|Ma Xiaohua|Ma Xiaohua|Hao Yue|Hao Yue|Zhang Jincheng|Zha
同期刊论文项目
GaN基毫米波功率器件与材料基础与关键技术研究
期刊论文 134 会议论文 8
同项目期刊论文
The experiential fit of the capacitance-voltage characteristics of the AlGaN/AlN/GaN high electron m
最大振荡频率为200GHz的蓝宝石衬底AlGaN/GaN HEMT(英文)
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