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Transport characteristics of AlGaN/GaN/AlGaN double heterostructures with high electron mobility
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：0
  • 页码：-
  • 相关项目：GaN基毫米波功率器件与材料基础与关键技术研究
作者： Meng, Fanna1|Meng, Fanna1|Li, Xiaogang1|Li, Xiaogang1|Hao, Yue1|Hao, Yue1|Zhang, Jincheng1|Zhang, Jincheng1|Zhou, Hao1|Zhou, Hao1|Ma, Juncai1|Ma, Juncai1|Xue, Junshuai1|Xue, Junshuai1|Dang, Lisha1|Dan
同期刊论文项目
GaN基毫米波功率器件与材料基础与关键技术研究
期刊论文 134 会议论文 8
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The experiential fit of the capacitance-voltage characteristics of the AlGaN/AlN/GaN high electron m
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