中文摘要：

nanoporous 罪恶 x 夹层生长位置在上的影响高质量轧了取向附生的电影从脱臼的行为被阐明。最好的质量轧了电影当 nanoporous 罪恶 x 夹层在不平的层上是成年的时，被完成，与摇曲线的高分辨率的X光检查衍射在半最大值为的完整的宽度( 1 [“ 1 ] 021 \bar 102 )思考减少到 223 条弧，吗并且全部的脱臼密度归结为不到 1.0 ???????い????????????????????????渠湡潮潦獳汩??業牣瑯步楴整？？

英文摘要：

The impact of nanoporous SiNx interlayer growth position on high-quality GaN epitaxial film was elucidated from the behavior of dislocations. The best quality GaN film was achieved when a nanoporous SiNx interlayer was grown on a rough layer, with the high-resolution X-ray diffraction rocking curve full width at half maximum for （ 1102 ） reflection decreasing to 223 arcs, and the total dislocation density reduced to less than 1.0xl08 cm-2. GaN films were grown on sapphire substrates by metal organic chem- ical vapor deposition. The quality of these films was investigated with high-resolution X-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. A preference for the formation of half-loops to reduce threading dislocations was observed when an SiNx interlayer was grown on a rough layer. A growth mechanism is proposed to explain this preference.