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Ultra-low specific on-resistance vertical double-diffused metal - Oxide semiconductor with a high-k
  • 期刊名称：Chinese Physics B
  • 时间：2013.2
  • 页码：-
  • 相关项目：高压、超低功耗的易集成SOI功率器件机理与新结构研究
作者： Jiang, Y.H|Wang, Q|Zhou, K|Wu, L.J|
同期刊论文项目
高压、超低功耗的易集成SOI功率器件机理与新结构研究
期刊论文 37 会议论文 4 获奖 6
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