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A High Figure-of-Merit SOI MOSFET with a Double-Sided Charge Oxide-Trench
  • ISSN号：0256-307X
  • 期刊名称：Chinese Physics Letters
  • 时间：2013.8
  • 页码：-
  • 相关项目：高压、超低功耗的易集成SOI功率器件机理与新结构研究
作者： Wang Pei|Zhou Kun|Zhang Bo|Li Zhao-Ji|
同期刊论文项目
高压、超低功耗的易集成SOI功率器件机理与新结构研究
期刊论文 37 会议论文 4 获奖 6
同项目期刊论文
A low on-resistance triple RESURF SOI LDMOS with planar and trench gate integration
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期刊信息
  • 《中国物理快报：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国科学院物理研究所、中国物理学会
  • 主编：
  • 地址：北京中关村中国科学院物理研究所内（北京603信箱《中国物理快报》编辑部）
  • 邮编：100080
  • 邮箱：cpl@aphy.iphy.ac.cn
  • 电话：010-82649490 82649024
  • 国际标准刊号：ISSN：0256-307X
  • 国内统一刊号：ISSN：11-1959/O4
  • 邮发代号:
  • 获奖情况:
  • 中国期刊方阵“双高”期刊
  • 国内外数据库收录:
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  • 被引量:190