中文摘要：

中科院上海技物所近十年来开展了高性能短波红外InGaAs焦平面探测器的研究。0.9~1.7mm近红外In Ga As焦平面探测器已实现了256×1、512×1、1024×1等多种线列规格,以及320×256、640×512、4000×128等面阵,室温暗电流密度〈5 n A/cm~2,室温峰值探测率优于5×10~（12）cm×Hz~（1/2）/W。同时,开展了向可见波段拓展的320×256焦平面探测器研究,光谱范围0.5~1.7mm,在0.8mm的量子效率约20%,在1.0mm的量子效率约45%。针对高光谱应用需求,上海技物所开展了1.0~2.5mm短波红外InGaAs探测器研究,暗电流密度小于10 n A/cm~2@200 K,形成了512×256、1024×128等多规格探测器,峰值量子效率高于75%,峰值探测率优于5×10~（11）cm×Hz~（1/2）/W。

英文摘要：

High performance SWIR lnGaAs FPAs have been studied in Shanghai Institute of Technical Physics （SITP） over the past ten years. Some typical linear 256× 1,512×1, 1024×1 FPAs and 2D format 320×256, 640 ×512, 4000 ×128 FPAs were obtained with relative spectral response in the range of 0.9 lam to 1.70 pm The dark current density is about 5 nA/cm2 and the peak detectivity is superior to 5 ×10^12 cmHz^1/2/W at room temperature. At the same time, 320 ×256 InGaAs FPAs with response extended to visible wavelength band have been studied and fabricated. The results indicated that the response of the FPAs covered the wavelength band from 0.5 μm to 1.70 μm. Quantum efficiency is approximately 20% at 0.8 μm, and 45% at 1.0 μm. The extended InGaAs FPAs with the response wavelength from 1.0 μm to 2.5 μm were also focused in SITP for hyperspectral applications. The dark current density dropped to about 10 nA/cm2 at 200 K. 2D format 512 × 256, 1024 × 128 extended lnGaAs FPAs were developed with peak detectivity superior to 5 ×10^12 cmHz^1/2/W and quantum efficiency superior to 75%.