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中文摘要：
采用ICP刻蚀（inductively coupled plasma etching）工艺制备了深台面n-on-p结构的可响应到2.4μm的延伸波长8×1元线列In Ga As探测器.器件表面采用ICP源激发的N2等离子体进行处理,然后再使用ICPCVD（inductively coupled plasma chemical vapor deposition）沉积一层Si Nx薄膜的钝化工艺.不同面积光敏元器件的电流—电压特性分析显示器件在常温和低温下侧面电流均得到有效抑制,激活能分析显示了器件优异的暗电流特性,在-10 m V偏压下,在200 K和300 K温度下暗电流密度分别为94.2 n A/cm^2和5.5×10^-4A/cm^2.
英文摘要：
In Ga As 8 × 1 linear arrays photodetectors with n-on-p structure and deep mesa,which can response at extended wavelength of 2. 4 μm,were fabricated by ICP etching（ inductively coupled plasma etching） process in the paper. The device surface was cleaned by N2 plasma activated by ICP,then Si Nxpassivation layer was deposited by ICPCVD（ inductively coupled plasma chemical vapor deposition）） on the device surface. The current-voltage analysis of different area devices indicated that the lateral surface current was suppressed effectively at both room and lower temperature. Activation energy analysis illustrated the excellent dark current characteristics. At- 10 m V bias,the dark current density is 94. 2 n A / cm^2 and 5. 5 × 10^-4A / cm^2 at temperatures of 200 K and 300 K,respectively.
同期刊论文项目
同项目期刊论文
The 1/f noise characteristics of In0.83Ga0.17As photodiodes with SiNx passivation films fabricated b
Inductively coupled plasma chemical vapor deposition silicon nitride for passivation of In0.83Ga0.17
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