中文摘要：

利用声表面波（SAW）的频散特性来表征超大规模集成电路（UISI）互连系统中低介电常数（k）薄膜的物性具有准确、快速、对材料无损伤等突出优点．研究了Si（100）衬底上淀积低k薄膜的分层结构中，SAW沿任意方向传播的色散关系．引入坐标变换后，单层薄膜特征矩阵从9阶降到6阶，双层薄膜特征矩阵从15阶降到10阶，大幅度提高了计算速度，有利于生产ULSI过程中的在线监测．

英文摘要：

The ultrasonic surface acoustic wave （SAW） technique is becoming attractive for accurate and nondestructive property determination for thin low-k films employed in the modem ultra-large-scale integrated circuit （ULSI）. In this paper, the dispersive characteristics of SAW propagating along arbitrary directions on the layered films deposited on Si（100） were studied in detail. The computation time was reduced greatly by appling coodinate transformation. The calculation of 9 × 9 Christoffel matrix was simplified to 6 × 6 matrix for one film layer structure, and from 15 × 15 matrix to 10 × 10 matrix for two-layered structure. This work will benefit the on-line test of low-k film properties during ULSI fabrication. Furthermore, the limitation on the propagating direction of SAW can be eliminated in the measurement.