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Simulation Study of the Layout Technique for P-hit Single-Event Transient Mitigation via the Source
  • ISSN号：1530-4388
  • 期刊名称：IEEE Transactions on Device and Materials Reliabil
  • 时间：2012.6.6
  • 页码：501-509
  • 相关项目：纳米级集成电路SET软错误率分析技术研究
作者： Chen, Jianjun|Chen, Shuming|Liang, Bin|Liu, Biwei|
同期刊论文项目
纳米级集成电路SET软错误率分析技术研究
期刊论文 32 会议论文 3 专利 12
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