位置：成果数据库 > 期刊 > 期刊详情页
Novel N-hit single event transient mitigation technique via open guard transistor in 65 nm bulk CMOS
  • ISSN号：1674-7321
  • 期刊名称：SCIENCE CHINA-TECHNOLOGICAL SCIENCES
  • 时间：2013.2.2
  • 页码：271-279
  • 相关项目：纳米级集成电路SET软错误率分析技术研究
作者： Huang PengCheng|Chen ShuMing|Chen JianJun|Liu BiWei|
同期刊论文项目
纳米级集成电路SET软错误率分析技术研究
期刊论文 32 会议论文 3 专利 12
同项目期刊论文
Voltage Dependency of Propagating Single-Event Transient Pulse Widths in 90 nm CMOS Technology
Charge collection of single event effects at Bragg';s peak
90nm CMOS工艺下p~+深阱掺杂浓度对电荷共享的影响
90纳米CMOS双阱工艺下STI深度对电荷共享的影响
180nm CMOS工艺下SEL敏感性关键影响因素
Simulation Study of the Layout Technique for P-hit Single-Event Transient Mitigation via the Source
Device-physics-based analytical model for SET pulse in sub-100 nm bulk CMOS Process
The modulation effect of substrate doping on multi-node charge collection and single-event transient
A Layout-Level Approach to Evaluate and Mitigate the Sensitive Areas of Multiple SETs in Combination
A Constrained Layout Placement Approach to Enhance Pulse Quenching Effect in Large Combinational Cir
基于DICE单元的抗SEU加固SRAM设计
Research on single event transient pulse quenching effect in 90 nm CMOS technology
NBTI效应导致SET脉冲在产生与传播过程中的展宽
Impact of pulse quenching effect on soft error vulnerabilities in combinational circuits based on st
p型金属氧化物半导体场效应晶体管界面态的积累对单粒子电荷共享收集的影响
带有n+深阱的三阱CMoS工艺中寄生NPN双极效应及其对电荷共享的影响
带有n^＋深阱的三阱CMoS工艺中寄生NPN双极效应及其对电荷共享的影响
90nm CMOS工艺下p^＋深阱掺杂浓度对电荷共享的影响
A-Z-A型石墨烯场效应晶体管吸附效应的第一性原理研究