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Complementary Resistive Switching in Flexible RRAM Devices
  • ISSN号：0741-3106
  • 期刊名称：IEEE Electron Device Letters
  • 时间：2014.9
  • 页码：915-917
  • 相关项目：原子层淀积栅介质/石墨烯纳米叠层的界面和电子结构
作者： Dai, Ya-Wei|Chen, Lin|Yang, Wen|Sun, Qing-Qing|Zhou, Peng|Wang, Peng-Fei|Ding, Shi-Jin|Zhang, David Wei|Xiao, Fei|
同期刊论文项目
原子层淀积栅介质/石墨烯纳米叠层的界面和电子结构
期刊论文 24
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