位置：成果数据库 > 期刊 > 期刊详情页
Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application
  • ISSN号：0734-2101
  • 期刊名称：Journal of Vacuum Science and Technology A
  • 时间：2012.1
  • 页码：01A148-
  • 相关项目：原子层淀积栅介质/石墨烯纳米叠层的界面和电子结构
作者： Chen, Lin|Yang, Wen|Li, Ye|Sun, Qing-Qing|Zhou, Peng|Lu, Hong-Liang|Ding, Shi-Jin|Zhang, David Wei|
同期刊论文项目
原子层淀积栅介质/石墨烯纳米叠层的界面和电子结构
期刊论文 24
同项目期刊论文
High-performance bilayer flexible resistive random access memory based on low-temperature thermal at
Modulation in current density of metal/n-SiC contact by inserting Al2O3 interfacial layer
Atomic Scale Investigation of a Graphene Nano-ribbon Based High Efficiency Spin Valve
Resistive switching of HfO2 based flexible memories fabricated by low temperature atomic layer depos
Novel Zn-Doped Al2O3 Charge Storage Medium for Light-Erasable In-Ga-Zn-O TFT Memory
Distortion of electronic structure in HfO2 induced by the out-diffused As from GaAs substrate
A Novel 1T-1D DRAM Cell for Embedded Application
Evolution of the band-gap and optical properties of graphene oxide with controllable reduction level
Hexagonal boron nitride intercalated multi-layer graphene: a possible ultimate solution to ultra-sca
Hybrid density functional theory study of Cu(In1-xGax)Se-2 band structure for solar cell application
The physics and backward diode behavior of heavily doped single layer MoS2 based p-n junctions
Complementary Resistive Switching in Flexible RRAM Devices
Optical properties of a HfO2/Si stack with a trace amount of nitrogen incorporation