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Distortion of electronic structure in HfO2 induced by the out-diffused As from GaAs substrate
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2013.5.14
  • 页码：-
  • 相关项目：原子层淀积栅介质/石墨烯纳米叠层的界面和电子结构
作者： He, Jing-Lan|Sun, Qing-Qing|Lu, Hong-Liang|Wang, Peng-Fei|Ding, Shi-Jin|Zhang, David Wei|
同期刊论文项目
原子层淀积栅介质/石墨烯纳米叠层的界面和电子结构
期刊论文 24
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