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The physics and backward diode behavior of heavily doped single layer MoS2 based p-n junctions
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2013.3.4
  • 页码：-
  • 相关项目：原子层淀积栅介质/石墨烯纳米叠层的界面和电子结构
作者： Sun, Qing-Qing|Li, Yong-Jun|He, Jin-Lan|Yang, Wen|Zhou, Peng|Lu, Hong-Liang|Ding, Shi-Jing|Zhang, David Wei|
同期刊论文项目
原子层淀积栅介质/石墨烯纳米叠层的界面和电子结构
期刊论文 24
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